real-time-dc-dynamic-biasing-method-for-switching-time-improvement

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Mechanically underdamped electrostatic fringing-field MEMS actuators are well known for their fast switching operation in response to a unit step input ...

Thermoelectric power (TEP) of individual single walled carbon nanotubes (SWNTs) has been measured at mesoscopic scales using a microfabricated heater and thermometers. Gate electric field dependent TEP modulation has been observed. The measured TEP of SWNTs is well correlated to the electrical conductance across the SWNT according to the Mott formula. Strong modulations of TEP were observed in the single-electron conduction limit. In addition, semiconducting SWNTs exhibit large values of TEP due to the Schottky barriers at SWNT-metal junctions.

Modulation of thermoelectric power of individual carbon nanotubes.

Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magnetoresistance and Hall resistance as a function of the gate voltage is observed as the sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov-de Haas oscillations. The effective mass of electron and hole carriers has been measured from the temperature dependent behavior of these oscillations.

Electric field modulation of galvanomagnetic properties of mesoscopic graphite.

We report a simple but powerful method for engineering multi-walled carbon nanotubes (MWNTs) by using manipulation by an atomic-force microscope. The successive shell-by-shell extraction process of ultralong MWNTs allows the exposure of the innermost single-walled carbon nanotubes (SWNTs), which have diameters as small as approximately 0.4 nm. The inner-shell extraction process changes the electrical characteristics of the MWNTs. Whereas the outer hollowed-out nanotubes show either metallic or semiconducting character, the innermost SWNTs of small diameter exhibit predominantly metallic transport properties.

Extracting subnanometer single shells from ultralong multiwalled carbon nanotubes.

Molecular electronics is often limited by the poorly defined nature of the contact between the molecules and the metal surface. We describe a method to wire molecules into gaps in single-walled carbon nanotubes (SWNTs). Precise oxidative cutting of a SWNT produces carboxylic acid-terminated electrodes separated by gaps of </=10 nanometers. These point contacts react with molecules derivatized with amines to form molecular bridges held in place by amide linkages. These chemical contacts are robust and allow a wide variety of molecules to be tested electrically. In addition to testing molecular wires, we show how to install functionality in the molecular backbone that allows the conductance of the single-molecule bridges to switch with pH.

Covalently bridging gaps in single-walled carbon nanotubes with conducting molecules.

Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications.

Operation of graphene transistors at gigahertz frequencies.

Thin film transistors (TFTs) are now poised to revolutionize the display, sensor, and flexible electronics markets. However, there is a limited choice of channel materials compatible with low-temperature processing. This has inhibited the fabrication of high electrical performance TFTs. Single-walled carbon nanotubes (CNTs) have very high mobilities and can be solution-processed, making thin film CNT-based TFTs a natural direction for exploration. The two main challenges facing CNT-TFTs are the difficulty of placing and aligning CNTs over large areas and low on/off current ratios due to admixture of metallic nanotubes. Here, we report the self-assembly and self-alignment of CNTs from solution into micron-wide strips that form regular arrays of dense and highly aligned CNT films covering the entire chip, which is ideally suitable for device fabrication. The films are formed from pre-separated, 99% purely semiconducting CNTs and, as a result, the CNT-TFTs exhibit simultaneously high drive currents and large on/off current ratios. Moreover, they deliver strong photocurrents and are also both photo- and electroluminescent.

Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays.

Carbon nanotubes and graphene are candidate materials for nanoscale electronic devices. Both materials show weak acoustic phonon scattering and long mean free paths for low-energy charge carriers. However, high-energy carriers couple strongly to optical phonons, which leads to current saturation and the generation of hot phonons. A non-equilibrium phonon distribution has been invoked to explain the negative differential conductance observed in suspended metallic nanotubes, while Raman studies have shown the electrical generation of hot G-phonons in metallic nanotubes. Here, we present a complete picture of the phonon distribution in a functioning nanotube transistor including the G and the radial breathing modes, the Raman-inactive zone boundary K mode and the intermediate-frequency mode populated by anharmonic decay. The effective temperatures of the high- and intermediate-frequency phonons are considerably higher than those of acoustic phonons, indicating a phonon-decay bottleneck. Most importantly, inclusion of scattering by substrate polar phonons is needed to fully account for the observed electronic transport behaviour.

Phonon populations and electrical power dissipation in carbon nanotube transistors.

We investigate the gate field dependence of light absorption and emission of an individual, suspended semiconducting carbon nanotube using Raman and photoluminescence spectroscopies. We find a strong reduction in the absorption strength and a red shift of the E(33) state of the nanotube with increasing gate field. The photoluminescence from the E(11) state is quenched even stronger. We explain these observations in terms of field-doping and its effects on both the radiative and nonradiative decay rates of the excitons. Thus, gate field-induced doping constitutes an effective means of controlling the optical properties of carbon nanotube devices.

Gate-variable light absorption and emission in a semiconducting carbon nanotube.

The photoluminescence of a partially suspended, semiconducting carbon nanotube that forms the active channel of a field-effect transistor is quenched and red-shifted upon application of a longitudinal electrical (source-drain) field. The quenching can be explained by a loss of oscillator strength and an increased Auger-like nonradiative decay of the E(11) exciton. The spectral shifts are due to drain-field-induced doping that leads to enhanced dielectric screening. Electroluminescence due to electron impact excitation of E(11) excitons is red-shifted and broadened with respect to the zero-field photoluminescence. A combination of screening and heating of the carbon nanotube can explain both spectral shift and broadening of the electrically induced light emission.

Carbon nanotube photo- and electroluminescence in longitudinal electric fields.

We demonstrate a light emitting p-i-n diode made of a highly aligned film of separated (99%) semiconducting carbon nanotubes, self-assembled from solution. By using a split gate technique, we create p- and n-doped regions in the nanotube film that are separated by a micron-wide gap. We inject p- and n-type charge carriers into the device channel from opposite contacts and investigate the radiative recombination using optical micro-spectroscopy. We find that the threshold-less light generation efficiency in the intrinsic carbon nanotube film segment can be enhanced by increasing the potential drop across the junction, demonstrating the LED-principle in a carbon nanotube film for the first time. The device emits infrared light that is polarized along the long axes of the carbon nanotubes that form the aligned film.

Article	Year
Modulation of thermoelectric power of individual carbon nanotubes. Physical review letters\| PubMed ID: 14754135	2003
Electric field modulation of galvanomagnetic properties of mesoscopic graphite. Physical review letters\| PubMed ID: 15904325	2005
Extracting subnanometer single shells from ultralong multiwalled carbon nanotubes. Proceedings of the National Academy of Sciences of the United States of America\| PubMed ID: 16186505	2005
Covalently bridging gaps in single-walled carbon nanotubes with conducting molecules. Science (New York, N.Y.)\| PubMed ID: 16424333	2006
Operation of graphene transistors at gigahertz frequencies. Nano letters\| PubMed ID: 19099364	2009
Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays. ACS nano\| PubMed ID: 19206278	2008
Phonon populations and electrical power dissipation in carbon nanotube transistors. Nature nanotechnology\| PubMed ID: 19421219	2009
Gate-variable light absorption and emission in a semiconducting carbon nanotube. Nano letters\| PubMed ID: 19637914	2009
Carbon nanotube photo- and electroluminescence in longitudinal electric fields. ACS nano\| PubMed ID: 19928934	2009
The polarized carbon nanotube thin film LED. Optics express\| PubMed ID: 21164919	2010

Joshua Small

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